Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
507,020 pcs
|
507020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| MSL (Moisture Sensitivity Level) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCP53-16,115 is a PNP bipolar junction transistor manufactured by Nexperia USA Inc. It is rated for a maximum collector-emitter voltage of 80V and a maximum collector current of 1A, with a power dissipation of 1W. The transistor offers a typical transition frequency of 145MHz and a minimum DC current gain (hFE) of 100 at Ic=150mA and Vce=2V. The maximum collector-emitter saturation voltage is 500mV at Ib=50mA and Ic=500mA.
This device is housed in a TO-261-4 (TO-261AA) package with a supplier device package of SOT-223, designed for surface-mount assembly. The maximum junction operating temperature is 150°C. The PNP configuration makes it suitable for general-purpose switching and amplification applications where a negative supply rail or complementary NPN pairing is required.
The SOT-223 package provides a compact footprint with a thermal tab for improved heat dissipation, making it appropriate for moderate-power applications within the 1W dissipation limit. The 145MHz transition frequency supports use in high-frequency signal processing and switching circuits up to moderate speeds.
As a single PNP transistor, the BCP53-16,115 can be used in complementary pairs with NPN transistors of similar ratings for push-pull output stages, motor drivers, and power management circuits. Its surface-mount package is well-suited for automated assembly in high-volume production.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.63 | $0.63 |
| 10+ | $0.38 | $0.38 |
| 100+ | $0.25 | $0.25 |
| 500+ | $0.17 | $0.17 |
| 1,000+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V_CEO) is 80V.
The maximum collector current (I_C) is 1A.
The transistor is available in a TO-261-4 (TO-261AA) package with a supplier device package of SOT-223, designed for surface-mount mounting.
The maximum junction operating temperature (T_J) is 150°C.
The existing database indicates RoHS3 compliance, but this status is unverified and should be treated as low confidence.
The minimum DC current gain (hFE) is 100, measured at Ic=150mA and Vce=2V.
The maximum collector-emitter saturation voltage (V_CE(sat)) is 500mV, measured at Ib=50mA and Ic=500mA.