BCM56DSX The BCM56DSX is an NPN/NPN matched double transistor rated for 80V collector-emitter voltage and 1A collector current, housed in a 6-TSOP (SC-74) surface-mount package. It features 5% current gain matching and is AEC-Q101 qualified.
Mfr Part #:

BCM56DSX

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The BCM56DSX is an NPN/NPN matched double transistor rated for 80V collector-emitter voltage and 1A collector current, housed in a 6-TSOP (SC-74) surface-mount package. It features 5% current gain matching and is AEC-Q101 qualified.
✓ Total Stock: 100,000 pcs
$ Price Range: $0.09 - $0.56

BCM56DSX Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
100,000 pcs
100000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16

BCM56DSX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCM56DSX Description

Short technical summary and product information.

The BCM56DSX is an NPN/NPN matched double transistor from Nexperia USA Inc., designed for applications requiring closely matched transistor characteristics. Each transistor in the pair is rated for a maximum collector-emitter voltage of 80V, a collector-base voltage of 100V, and a collector current of 1A, with a peak collector current of 2A for single pulses up to 1ms. The device provides a DC current gain (hFE) ranging from 63 to 250 at VCE=2V and IC=150mA, and offers current gain matching between the two transistors of 0.95 to 1.05 (5% matching) at VCE=5V and IC=2mA. Base-emitter voltage matching is specified at a maximum of 2mV.

 

This matched pair is well-suited for current mirrors, differential amplifiers, and other precision analog circuits where transistor matching is critical. The device also finds application in linear voltage regulators, MOSFET drivers, high-side switches, power management, and general amplifier circuits. With a transition frequency of 155MHz, it supports moderate-speed switching and amplification tasks.

 

The BCM56DSX is housed in a compact SOT457 (SC-74) surface-mount package with a 6-TSOP supplier device package designation. It is rated for a total power dissipation of 500mW per device at ambient temperatures up to 25°C, with a maximum junction temperature of 150°C. The operating ambient temperature range is -55°C to 150°C, and the storage temperature range is -65°C to 150°C. The device is AEC-Q101 qualified, making it suitable for automotive applications.

BCM56DSX Quick Information

Product Type: Bipolar Junction Transistor (BJT) Array
Canonical Name: NPN/NPN Matched Double Transistor
Subcategory: Transistors - Bipolar (BJT) - Arrays

BCM56DSX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCM56DSX Estimated Pricing

Qty Low High
1+ $0.56 $0.56
10+ $0.35 $0.35
100+ $0.22 $0.22
500+ $0.17 $0.17
1,000+ $0.15 $0.15
3,000+ $0.13 $0.13
6,000+ $0.12 $0.12
9,000+ $0.10 $0.10
24,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCM56DSX Features

  • Matched NPN transistor pair with 5% gain matching.
  • Rated for 80V collector-emitter voltage and 1A current.
  • AEC-Q101 qualified for automotive applications.
  • Surface-mount 6-TSOP (SC-74) package.
  • 155MHz transition frequency for moderate-speed switching.

BCM56DSX Applications

  • Ideal for current mirror circuits.
  • Used in differential amplifier designs.
  • Suitable for linear voltage regulators.
  • Drives MOSFETs in switching applications.
  • Works in power management systems.

BCM56DSX FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BCM56DSX?

The maximum collector-emitter voltage (VCEO) is 80V.

What is the maximum collector current rating?

The maximum continuous collector current is 1A, with a peak collector current of 2A for single pulses up to 1ms.

What package is the BCM56DSX available in?

The BCM56DSX is available in an SC-74 (SOT457) surface-mount package, with a supplier device package of 6-TSOP.

What is the operating temperature range?

The operating ambient temperature range is -55°C to 150°C, and the storage temperature range is -65°C to 150°C.

Is the BCM56DSX AEC-Q101 qualified?

Yes, the BCM56DSX is AEC-Q101 qualified as confirmed in the datasheet.

What is the current gain matching between the two transistors?

The current gain matching (hFE1/hFE2) is between 0.95 and 1.05, providing 5% matching.

What is the maximum power dissipation of the BCM56DSX?

The maximum total power dissipation is 500mW per device at ambient temperatures up to 25°C.

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