| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
61,020 pcs
|
61020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC860C,215 is a PNP general purpose transistor manufactured by Nexperia USA Inc. It is designed for low current and low voltage applications, with a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V. The transistor features a high DC current gain (hFE) of 420 to 800 at IC = -2 mA, VCE = -5 V, making it suitable for low noise input stages in audio frequency equipment.
The device is housed in a surface-mount SOT-23 package (TO-236-3, SC-59, SOT-23-3) with a supplier device package of TO-236AB. It has a maximum power dissipation of 250 mW and a junction temperature range up to 150 °C. The thermal resistance from junction to ambient is 500 K/W when mounted on an FR4 PCB.
Key electrical characteristics include a transition frequency of 100 MHz (typical), collector-base cutoff current of 15 nA at VCB = -30 V, and collector capacitance of 4.5 pF at VCB = -10 V. The transistor is RoHS3 compliant and has an MSL of 1 (unlimited). It is the PNP complement to the NPN types BC849 and BC850.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.29 | $0.29 |
| 10+ | $0.12 | $0.12 |
| 100+ | $0.08 | $0.08 |
| 500+ | $0.05 | $0.05 |
| 1,000+ | $0.05 | $0.05 |
| 3,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (VCEO) is -45 V.
It is available in a surface-mount SOT-23 package (TO-236-3, SC-59, SOT-23-3) with supplier device package TO-236AB.
The maximum junction temperature is 150 °C, with an operating ambient temperature range of -65 to +150 °C.
The part is marked as RoHS3 compliant according to the existing database entry (low confidence, unverified).
The DC current gain ranges from 420 to 800 at IC = -2 mA, VCE = -5 V.
250 mW at 25 °C ambient temperature.
100 MHz (typical).