BC860B,215 PNP general purpose transistor from Nexperia, rated for 45V collector-emitter voltage and 100mA collector current. Available in surface-mount SOT-23-3 (TO-236AB) package.
Mfr Part #:

BC860B,215

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
PNP general purpose transistor from Nexperia, rated for 45V collector-emitter voltage and 100mA collector current. Available in surface-mount SOT-23-3 (TO-236AB) package.
✓ Total Stock: 172,020 pcs
$ Price Range: $0.03 - $0.29

BC860B,215 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
172,020 pcs
172020 pcs On Request 1 On Request On Request On Request On Request On Request

BC860B,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC860B,215 Description

Short technical summary and product information.

The BC860B,215 is a PNP general purpose bipolar junction transistor manufactured by Nexperia. It is designed for low voltage and low current applications, with a maximum collector-emitter voltage of 45V and a maximum collector current of 100mA. The transistor offers a DC current gain (hFE) ranging from 220 to 475 at 2mA collector current, ensuring good amplification performance. With a gain bandwidth product of 100MHz, it is suitable for audio frequency applications up to 100MHz. The device is housed in a surface-mount SOT-23-3 package (also known as TO-236AB), making it ideal for compact PCB designs. The operating junction temperature range is -65°C to +150°C, allowing use in a wide range of environments. The BC860B,215 is the PNP complement to the NPN BC849 and BC850 series. Typical applications include low noise input stages of audio frequency equipment, general purpose switching, and amplification in portable and battery-powered devices.

BC860B,215 Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single PNP
Series: BC860
Canonical Name: BC860B,215 PNP General Purpose Transistor
Subcategory: Single PNP Transistor

BC860B,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC860B,215 Estimated Pricing

Qty Low High
1+ $0.29 $0.29
10+ $0.12 $0.12
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.04 $0.04
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC860B,215 Features

  • Low voltage PNP transistor (max 45V).
  • Low current capability (max 100mA).
  • High DC current gain (220 to 475).
  • Surface mount SOT-23-3 package.
  • Gain bandwidth product 100MHz.

BC860B,215 Applications

  • Low noise input stages of audio equipment.
  • General purpose switching and amplification.
  • Portable and battery-powered devices.
  • Complements NPN BC849/BC850 series.

BC860B,215 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of BC860B,215?

The maximum collector-emitter voltage (VCEO) is 45V.

What package is the BC860B,215 available in?

The BC860B,215 is available in a surface-mount SOT-23-3 package (also known as TO-236AB).

What is the operating temperature range of BC860B,215?

The operating junction temperature range is -65°C to +150°C.

Is the BC860B,215 RoHS compliant?

The current data indicates RoHS3 compliance, but this is unverified and should be confirmed with the manufacturer.

What is the DC current gain (hFE) of BC860B,215?

The DC current gain ranges from 220 to 475 at Ic=2mA, Vce=5V.

What is the gain bandwidth product of BC860B,215?

The typical gain bandwidth product (fT) is 100MHz.

What is the collector-emitter saturation voltage of BC860B,215?

The VCEsat is 300mV max at Ic=10mA, Ib=0.5mA, and 650mV max at Ic=100mA, Ib=5mA.

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