Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
61,020 pcs
|
61020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Emitter Voltage (Maximum @ IC = 10 mA; VCE = 5 V) | |
| Base Emitter Voltage (Minimum/Typical/Maximum @ IC = -2 mA; VCE = -5 V) | |
| Base-Emitter Saturation Voltage (Typical @ Ic = 10 mA, Ib = 0.5 mA) | |
| Base-Emitter Saturation Voltage (Typical @ Ic = 100 mA, Ib = 5 mA) | |
| Collector Capacitance | |
| Collector Current (Maximum) | |
| Collector Cutoff Current (Maximum @ IE = 0; VCB = 30 V) | |
| Collector Cutoff Current (Maximum @ IE = 0; VCB = 30 V; Tj = 150 °C) | |
| Collector Emitter Voltage (Maximum) | |
| Collector-Base Voltage (BC859) | |
| Collector-Emitter Saturation Voltage (Typical/Maximum @ IC = 10 mA, IB = 0.5 mA) | |
| Current | |
| DC Current Gain (Minimum/Maximum @ Ic=2 mA, Vce=5 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Ambient Temperature Range | |
| Operating Temperature | |
| Package Description | |
| Package Version | |
| Peak Base Current | |
| Peak Collector Current | |
| Power | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC859B,215 is a PNP general purpose bipolar junction transistor manufactured by Nexperia USA Inc. It is designed for low current and low voltage applications, with a maximum collector-emitter voltage of -30V and a maximum collector current of -100mA. The device offers a DC current gain (hFE) range of 220 to 475 at -2mA and -5V, making it suitable for amplification and switching tasks.
This transistor is housed in a surface-mount SOT23 (TO-236AB) plastic package, which is ideal for compact PCB designs. It has a total power dissipation of 250mW when mounted on an FR4 printed-circuit board. The BC859B,215 is the B-gain version of the BC859 series and has NPN complements in the BC849 and BC850 families.
Typical applications include low noise input stages for audio frequency equipment. The device is rated for an operating junction temperature up to 150°C and has a storage temperature range of -65°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.29 | $0.29 |
| 10+ | $0.12 | $0.12 |
| 100+ | $0.07 | $0.07 |
| 500+ | $0.05 | $0.05 |
| 1,000+ | $0.04 | $0.04 |
| 3,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is -30V.
The BC859B,215 is available in a surface mount SOT23 (TO-236AB) package.
The maximum junction temperature (Tj) is 150°C. The operating ambient temperature range is -65°C to +150°C.
The DC current gain (hFE) is between 220 and 475 at IC = -2mA and VCE = -5V.
The maximum continuous collector current (IC) is -100mA.
The total power dissipation (Ptot) is 250mW at an ambient temperature of 25°C when mounted on an FR4 PCB.