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BC859B,215 The BC859B,215 is a PNP general purpose transistor from Nexperia USA Inc. It features a maximum collector-emitter voltage of -30V and a continuous collector current of -100mA.
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BC859B,215

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The BC859B,215 is a PNP general purpose transistor from Nexperia USA Inc. It features a maximum collector-emitter voltage of -30V and a continuous collector current of -100mA.
✓ Total Stock: 61,020 pcs
$ Price Range: $0.03 - $0.29

BC859B,215 Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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61,020 pcs
On Request
61020 pcs On Request 1 On Request On Request On Request On Request On Request
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BC859B,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BC859B,215 Description

Short technical summary and product information.

The BC859B,215 is a PNP general purpose bipolar junction transistor manufactured by Nexperia USA Inc. It is designed for low current and low voltage applications, with a maximum collector-emitter voltage of -30V and a maximum collector current of -100mA. The device offers a DC current gain (hFE) range of 220 to 475 at -2mA and -5V, making it suitable for amplification and switching tasks.

 

This transistor is housed in a surface-mount SOT23 (TO-236AB) plastic package, which is ideal for compact PCB designs. It has a total power dissipation of 250mW when mounted on an FR4 printed-circuit board. The BC859B,215 is the B-gain version of the BC859 series and has NPN complements in the BC849 and BC850 families.

 

Typical applications include low noise input stages for audio frequency equipment. The device is rated for an operating junction temperature up to 150°C and has a storage temperature range of -65°C to +150°C.

BC859B,215 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC859
Canonical Name: BC859B,215 PNP General Purpose Transistor
Subcategory: Single PNP

BC859B,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC859B,215 Estimated Pricing

Qty Low High
1+ $0.29 $0.29
10+ $0.12 $0.12
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.04 $0.04
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC859B,215 Features

  • PNP general purpose bipolar transistor.
  • Maximum collector-emitter voltage of -30V.
  • Continuous collector current rating of -100mA.
  • DC current gain (hFE) range of 220 to 475.
  • Surface mount SOT23 (TO-236AB) package.

BC859B,215 Applications

  • Low noise input stages for audio amplifiers.
  • General purpose switching and amplification.
  • Signal processing in portable electronics.

BC859B,215 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the BC859B,215?

The maximum collector-emitter voltage (VCEO) is -30V.

What is the package type for the BC859B,215?

The BC859B,215 is available in a surface mount SOT23 (TO-236AB) package.

What is the operating temperature range for the BC859B,215?

The maximum junction temperature (Tj) is 150°C. The operating ambient temperature range is -65°C to +150°C.

What is the DC current gain (hFE) of the BC859B,215?

The DC current gain (hFE) is between 220 and 475 at IC = -2mA and VCE = -5V.

What is the maximum collector current for the BC859B,215?

The maximum continuous collector current (IC) is -100mA.

What is the total power dissipation of the BC859B,215?

The total power dissipation (Ptot) is 250mW at an ambient temperature of 25°C when mounted on an FR4 PCB.

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