BC857QASZ The BC857QASZ is a PNP/PNP dual general-purpose transistor from Nexperia USA Inc. It features a 45V collector-emitter voltage, 100mA collector current, and is housed in a leadless DFN1010B-6 (SOT1216) surface-mount package.
Mfr Part #:

BC857QASZ

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The BC857QASZ is a PNP/PNP dual general-purpose transistor from Nexperia USA Inc. It features a 45V collector-emitter voltage, 100mA collector current, and is housed in a leadless DFN1010B-6 (SOT1216) surface-mount package.
✓ Total Stock: 11,020 pcs
$ Price Range: $0.06 - $0.38

BC857QASZ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
11,020 pcs
11020 pcs On Request 1 On Request On Request On Request On Request On Request

BC857QASZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC857QASZ Description

Short technical summary and product information.

The BC857QASZ is a PNP/PNP dual general-purpose bipolar junction transistor manufactured by Nexperia USA Inc. It integrates two matched PNP transistors in a single ultra-small DFN1010B-6 (SOT1216) leadless package, reducing component count and simplifying PCB assembly.

 

Key electrical specifications include a collector-emitter breakdown voltage of -45V, a collector current rating of -100mA, and a DC current gain (hFE) ranging from 200 to 450 at -5V VCE and -2mA IC. The device offers a transition frequency of 100 MHz and a maximum power dissipation of 350 mW per device (230 mW per transistor).

 

Designed for general-purpose switching and amplification, the BC857QASZ is suitable for space-constrained applications such as mobile devices. The package has a low height of 0.37 mm, making it ideal for thin-profile designs. The device is surface-mountable and uses a leadless termination style.

BC857QASZ Quick Information

Product Type: Bipolar Transistor Array
Series: BC857QAS
Canonical Name: BC857QASZ PNP/PNP General-Purpose Transistor Array
Subcategory: PNP/PNP Dual Array

BC857QASZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC857QASZ Estimated Pricing

Qty Low High
1+ $0.38 $0.38
10+ $0.22 $0.22
100+ $0.14 $0.14
500+ $0.10 $0.10
1,000+ $0.09 $0.09
2,500+ $0.08 $0.08
5,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC857QASZ Features

  • Dual PNP transistors in one package.
  • Rated for -45V collector-emitter voltage.
  • Supports up to -100mA collector current.
  • DC current gain range of 200 to 450.
  • Ultra-thin 0.37 mm DFN1010B-6 package.

BC857QASZ Applications

  • General-purpose switching circuits.
  • Signal amplification in mobile devices.
  • Space-constrained PCB designs.
  • Low-profile electronic assemblies.

BC857QASZ FAQs

5 frequently asked questions generated from this part’s specifications.
What is the package type for the BC857QASZ?

The BC857QASZ is housed in a DFN1010B-6 (SOT1216) surface-mount package.

What is the operating temperature range of the BC857QASZ?

The ambient operating temperature range is -55°C to 150°C, with a junction temperature of up to 150°C.

Is the BC857QASZ RoHS compliant?

The BC857QASZ is listed as RoHS3 Compliant, though this status is unverified.

What is the DC current gain (hFE) of the BC857QASZ?

The DC current gain (hFE) ranges from 200 to 450 at VCE = -5V and IC = -2mA.

What is the collector-emitter voltage rating of the BC857QASZ?

The collector-emitter voltage (VCEO) is -45V.

Home
Account

Categories