| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,020 pcs
|
11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC857QASZ is a PNP/PNP dual general-purpose bipolar junction transistor manufactured by Nexperia USA Inc. It integrates two matched PNP transistors in a single ultra-small DFN1010B-6 (SOT1216) leadless package, reducing component count and simplifying PCB assembly.
Key electrical specifications include a collector-emitter breakdown voltage of -45V, a collector current rating of -100mA, and a DC current gain (hFE) ranging from 200 to 450 at -5V VCE and -2mA IC. The device offers a transition frequency of 100 MHz and a maximum power dissipation of 350 mW per device (230 mW per transistor).
Designed for general-purpose switching and amplification, the BC857QASZ is suitable for space-constrained applications such as mobile devices. The package has a low height of 0.37 mm, making it ideal for thin-profile designs. The device is surface-mountable and uses a leadless termination style.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.38 | $0.38 |
| 10+ | $0.22 | $0.22 |
| 100+ | $0.14 | $0.14 |
| 500+ | $0.10 | $0.10 |
| 1,000+ | $0.09 | $0.09 |
| 2,500+ | $0.08 | $0.08 |
| 5,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BC857QASZ is housed in a DFN1010B-6 (SOT1216) surface-mount package.
The ambient operating temperature range is -55°C to 150°C, with a junction temperature of up to 150°C.
The BC857QASZ is listed as RoHS3 Compliant, though this status is unverified.
The DC current gain (hFE) ranges from 200 to 450 at VCE = -5V and IC = -2mA.
The collector-emitter voltage (VCEO) is -45V.