BC857BW,115 PNP general-purpose transistor with maximum collector-emitter voltage of -45V and collector current of -100mA. Housed in a surface-mount SOT323 (SC-70) package.
Mfr Part #:

BC857BW,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
PNP general-purpose transistor with maximum collector-emitter voltage of -45V and collector current of -100mA. Housed in a surface-mount SOT323 (SC-70) package.
Total Stock: 2,413,020 pcs
$ Price Range: $0.03 - $0.26

BC857BW,115 Available from 1 distributor

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Non-Authorised
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BC857BW,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Junction Temperature
Lead Style
Mounting Type
Number of Leads
Operating Temperature
Peak Base Current
Peak Collector Current
Power
SVHC Present
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC857BW,115 Description

Short technical summary and product information.

The BC857BW,115 is a PNP general-purpose bipolar junction transistor from Nexperia, part of the BC85xW family. It is designed for low-power switching and amplification applications.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -45V, collector-base voltage (VCBO) of -50V, and emitter-base voltage (VEBO) of -5V. The continuous collector current is rated at -100mA with a peak of -200mA. DC current gain (hFE) ranges from 220 to 475 at VCE = 5V and IC = 2mA. Maximum collector-emitter saturation voltage is -600mV at IB = 5mA, IC = 100mA. Transition frequency is typically 100MHz. Total power dissipation is 200mW at 25°C ambient temperature.

 

The transistor is housed in a surface-mount SOT323 (SC-70) package with 3 leads and gull-wing terminations. It operates over a junction temperature range of -65°C to 150°C and can be stored in the same range.

 

Typical applications include general-purpose switching and signal amplification in consumer and industrial electronics. The NPN complement is the BC847W.

BC857BW,115 Quick Information

Product Type: PNP Bipolar Transistor
Series: BC857W
Canonical Name: BC857BW,115 PNP General-Purpose Transistor
Subcategory: PNP Transistor

BC857BW,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC857BW,115 Estimated Pricing

Qty Low High
1+ $0.26 $0.26
10+ $0.11 $0.11
100+ $0.06 $0.06
500+ $0.04 $0.04
1,000+ $0.03 $0.03
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC857BW,115 Features

  • PNP general-purpose bipolar junction transistor.
  • Maximum collector-emitter voltage of -45V.
  • DC current gain range 220 to 475.
  • Surface-mount SOT323 (SC-70) package.
  • 100 MHz typical transition frequency.

BC857BW,115 Applications

  • General-purpose switching and amplification circuits.
  • Low-power signal processing applications.
  • Used in consumer and industrial electronics.

BC857BW,115 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of BC857BW,115?

The maximum collector-emitter voltage (VCEO) is -45V.

What is the maximum collector current?

The maximum continuous collector current is -100mA, with a peak of -200mA.

What is the DC current gain (hFE) range?

The DC current gain ranges from 220 to 475 at VCE = 5V and IC = 2mA.

What is the transition frequency?

The typical transition frequency is 100 MHz.

What is the power dissipation?

The maximum total power dissipation is 200 mW at 25°C ambient temperature.

What package is this transistor available in?

It is available in a surface-mount SOT323 (SC-70) package.

What is the operating temperature range?

The operating junction temperature range is -65°C to 150°C.

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