| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,413,020 pcs
|
2413020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The BC857BW,115 is a PNP general-purpose bipolar junction transistor from Nexperia, part of the BC85xW family. It is designed for low-power switching and amplification applications.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -45V, collector-base voltage (VCBO) of -50V, and emitter-base voltage (VEBO) of -5V. The continuous collector current is rated at -100mA with a peak of -200mA. DC current gain (hFE) ranges from 220 to 475 at VCE = 5V and IC = 2mA. Maximum collector-emitter saturation voltage is -600mV at IB = 5mA, IC = 100mA. Transition frequency is typically 100MHz. Total power dissipation is 200mW at 25°C ambient temperature.
The transistor is housed in a surface-mount SOT323 (SC-70) package with 3 leads and gull-wing terminations. It operates over a junction temperature range of -65°C to 150°C and can be stored in the same range.
Typical applications include general-purpose switching and signal amplification in consumer and industrial electronics. The NPN complement is the BC847W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.26 | $0.26 |
| 10+ | $0.11 | $0.11 |
| 100+ | $0.06 | $0.06 |
| 500+ | $0.04 | $0.04 |
| 1,000+ | $0.03 | $0.03 |
| 3,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is -45V.
The maximum continuous collector current is -100mA, with a peak of -200mA.
The DC current gain ranges from 220 to 475 at VCE = 5V and IC = 2mA.
The typical transition frequency is 100 MHz.
The maximum total power dissipation is 200 mW at 25°C ambient temperature.
It is available in a surface-mount SOT323 (SC-70) package.
The operating junction temperature range is -65°C to 150°C.