BC857B-QR PNP general-purpose transistor with 45V collector-emitter breakdown voltage and 100mA collector current capability. Housed in a SOT23 surface-mount package.
Mfr Part #:

BC857B-QR

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
PNP general-purpose transistor with 45V collector-emitter breakdown voltage and 100mA collector current capability. Housed in a SOT23 surface-mount package.
✓ Total Stock: 121,020 pcs
$ Price Range: $0.03 - $0.12

BC857B-QR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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121,020 pcs
121020 pcs On Request 1 On Request On Request On Request On Request On Request

BC857B-QR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC857B-QR Description

Short technical summary and product information.

The Nexperia BC857B-QR is a PNP general-purpose bipolar transistor designed for low-voltage, low-current switching and amplification applications. It features a maximum collector-emitter voltage of -45V and a maximum collector current of -100mA.

 

The transistor offers a DC current gain (hFE) range of 220 to 475, measured at Vce = 5V and Ic = 2mA. It provides a typical transition frequency of 100MHz and a low collector-emitter saturation voltage of 650mV at Ib=5mA, Ic=100mA. Maximum power dissipation is 250mW at 25°C ambient, and the device can operate at junction temperatures up to 150°C.

 

The BC857B-QR is qualified according to AEC-Q101 and is recommended for automotive applications. It is supplied in a SOT23 (TO-236AB) surface-mount package, suitable for automated assembly processes.

BC857B-QR Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC857B-Q
Canonical Name: Nexperia BC857B-QR PNP General-Purpose Transistor
Subcategory: Single BJT

BC857B-QR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC857B-QR Estimated Pricing

Qty Low High
1+ $0.12 $0.12
10+ $0.10 $0.10
100+ $0.05 $0.05
500+ $0.04 $0.04
1,000+ $0.03 $0.03
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC857B-QR Features

  • PNP general-purpose transistor for low power.
  • 45V collector-emitter breakdown voltage rating.
  • 100mA maximum continuous collector current.
  • DC current gain range of 220 to 475.
  • AEC-Q101 qualified for automotive applications.

BC857B-QR Applications

  • General-purpose switching and amplification circuits.
  • Automotive electronic control modules.
  • Low-power signal processing stages.
  • Driver stages for small loads.

BC857B-QR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the BC857B-QR?

The maximum collector-emitter voltage (Vceo) is -45V.

What is the maximum collector current rating?

The maximum collector current (Ic) is -100mA.

What package is the BC857B-QR available in?

The transistor comes in a SOT23 (TO-236AB) surface-mount package.

What is the operating junction temperature range?

The maximum junction temperature (Tj) is 150°C.

Is the BC857B-QR RoHS compliant?

The part is listed as RoHS3 compliant.

Is this transistor qualified for automotive use?

Yes, the BC857B-QR is AEC-Q101 qualified and recommended for automotive applications.

What is the DC current gain (hFE) of the BC857B-QR?

The DC current gain ranges from 220 to 475 at Vce = 5V and Ic = 2mA.

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