| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,220 pcs
|
1220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Style | |
| Package / Case | |
| Tape & Reel |
The Nexperia BC857B is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It offers a maximum DC collector current of 0.2 A and a collector-emitter voltage (VCEO) of up to 45 V. The transistor operates within a wide temperature range, from -65 °C to 150 °C.
This component is housed in a compact SOT-23 surface-mount package, making it ideal for space-constrained designs. Its gain bandwidth product (fT) is 100 MHz, and it has a maximum power dissipation of 250 mW. The BC857B is manufactured by Nexperia and is a reliable choice for general-purpose amplification and switching tasks.
Key electrical characteristics include a collector-base voltage (VCBO) of 50 V and an emitter-base voltage (VEBO) of 5 V. The DC current gain (Hfe) is specified up to 220 at 2 mA and 5 V. The component is supplied on a reel for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO Max) for the BC857B is 45 V.
The maximum DC collector current for the BC857B is 0.2 A.
The BC857B operates from a minimum temperature of -65 °C to a maximum of 150 °C.
The BC857B is supplied in a SOT-23 package.
The gain bandwidth product (fT) for the BC857B is 100 MHz.