74VHC08FTBJ
Toshiba
The Toshiba 74VHC08FTBJ is a digital integrated circuit featuring four 2-input AND gates. It operates within a 2 to 5.5 VDC supply voltage range.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,986 pcs
|
2986 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Tape & Reel |
The Nexperia BC857B,215 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It comes in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 45V and a maximum DC collector current (IC) of 0.2A. The transistor also features a gain bandwidth product (fT) of 100 MHz and a maximum power dissipation of 250 mW. The operating temperature range spans from -65°C to 150°C.
This component is ideal for use in amplification and switching circuits where a small-signal PNP transistor is required. Its SOT-23 package facilitates automated assembly processes on printed circuit boards. The Nexperia BC857B,215 is a reliable choice for designers seeking a general-purpose PNP transistor with established specifications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC857B,215 is 45V.
The maximum DC collector current (IC) for the BC857B,215 is 0.2A.
The BC857B,215 operates between -65°C and 150°C.
The BC857B,215 is available in a SOT-23 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
