BC857AMB,315 PNP general-purpose transistor with 45V collector-emitter voltage and 100mA collector current. Supplied in leadless SOT883B surface-mount package.
Mfr Part #:

BC857AMB,315

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
PNP general-purpose transistor with 45V collector-emitter voltage and 100mA collector current. Supplied in leadless SOT883B surface-mount package.
Total Stock: 1,000,000 pcs
$ Price Range: $0.03 - $0.30

BC857AMB,315 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,000,000 pcs
1000000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16

BC857AMB,315 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
AEC-Q101 Qualification
Ambient Temperature Range (Tamb)
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Storage Temperature
Storage Temperature Range (TSTG)
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC857AMB,315 Description

Short technical summary and product information.

The BC857AMB,315 is a PNP general-purpose bipolar junction transistor from Nexperia, designed for low-power switching and amplification. It features a maximum collector-emitter voltage of -45V and a maximum collector current of -100mA, making it suitable for a wide range of signal and low-current applications.

 

The device provides a DC current gain (hFE) of 125 to 250 at VCE = -5V and IC = -2mA, a typical transition frequency of 100MHz, and a maximum VCE(sat) of -300mV at IB = -500µA and IC = -10mA. Power dissipation is rated at 250mW at 25°C ambient, with an operating temperature range of -55°C to +150°C.

 

The transistor is housed in a leadless ultra-small SOT883B surface-mount package (also specified as DFN1006B-3), with body dimensions of 1.0 x 0.6 x 0.37mm. This package offers power dissipation comparable to SOT23 while occupying minimal board space. The device is AEC-Q101 qualified for automotive applications, and its typical uses include general-purpose switching and amplification in space-constrained equipment such as mobile devices.

BC857AMB,315 Quick Information

Product Type: PNP Bipolar Transistor
Series: BC857xMB
Canonical Name: BC857AMB,315
Subcategory: Single

BC857AMB,315 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC857AMB,315 Estimated Pricing

Qty Low High
1+ $0.30 $0.30
10+ $0.17 $0.17
100+ $0.11 $0.11
500+ $0.08 $0.08
1,000+ $0.07 $0.07
2,500+ $0.06 $0.06
5,000+ $0.05 $0.05
10,000+ $0.03 $0.03
20,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC857AMB,315 Features

  • PNP general-purpose bipolar transistor for switching.
  • Rated for -45V collector-emitter voltage.
  • Maximum collector current of -100mA.
  • Supplied in leadless SOT883B package.
  • AEC-Q101 qualified for automotive.

BC857AMB,315 Applications

  • Used for general-purpose switching and amplification.
  • Ideal for space-constrained mobile devices.
  • Suitable for low-power battery-operated circuits.
  • Can be paired with NPN type BC847AMB.

BC857AMB,315 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BC857AMB,315?

-45V (open base).

What package does the BC857AMB,315 come in?

Leadless SOT883B surface-mount package, also referred to as DFN1006B-3.

What is the operating temperature range?

-55°C to +150°C ambient; storage from -65°C to +150°C.

Is the BC857AMB,315 RoHS compliant?

Listed as RoHS3 compliant, but this status has not been independently verified.

What is the DC current gain (hFE) range?

125 to 250 at VCE = -5V, IC = -2mA.

What is the collector-emitter saturation voltage?

Maximum -300mV at IB = -500µA, IC = -10mA.

What is the maximum power dissipation?

250mW at 25°C ambient temperature.

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