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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
310,020 pcs
|
310020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC857,215 is a PNP bipolar junction transistor manufactured by Nexperia USA Inc. It is designed for general-purpose switching and amplification applications. The transistor has a maximum collector-emitter voltage (Vceo) of 45V and a maximum collector current (Ic) of 100mA, with a power dissipation of 250mW.
Electrical characteristics include a minimum DC current gain (hFE) of 125 at a test condition of Ic=2mA and Vce=5V. The maximum collector-emitter saturation voltage (Vce(sat)) is 650mV at Ib=5mA and Ic=100mA. The transition frequency (fT) is 100 MHz, making it suitable for low-frequency switching and amplification.
The device is housed in a surface-mount SOT-23 package (also known as TO-236-3, SC-59, or SOT-23-3) with a supplier device package of TO-236AB. The maximum operating junction temperature is 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.12 | $0.12 |
| 10+ | $0.07 | $0.07 |
| 100+ | $0.04 | $0.04 |
| 500+ | $0.03 | $0.03 |
| 1,000+ | $0.03 | $0.03 |
| 3,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 45V.
The maximum collector current (Ic) is 100mA.
The package is surface mount SOT-23, also known as TO-236-3, SC-59, or SOT-23-3. The supplier device package is TO-236AB.
The maximum operating junction temperature is 150°C.
The part is listed as RoHS3 Compliant, but this status is unverified.
The minimum DC current gain (hFE) is 125 at a test condition of Ic=2mA and Vce=5V.
The transition frequency (fT) is 100 MHz.