TPC6108TE85L,F
Toshiba
The Toshiba TPC6108TE85L,F is a P Channel Power MOSFET. It features a 30V drain-source voltage and a 4.5A continuous drain current.
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2,388 pcs
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2388 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BC857B,215 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It features a maximum collector-emitter voltage (VCEO) of 45V and a maximum continuous collector current (Ic) of 200mA.
This transistor offers a typical gain bandwidth product (fT) of 100MHz and a maximum DC current gain (Hfe) of 220 at 2mA and 5V. The operating temperature range is from -65°C to 150°C.
Packaged in a compact SOT-23 surface-mount (SMD) case, the BC857B,215 is suitable for automated assembly processes. Its specifications make it a versatile component for various amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC857B,215 is 45V.
The maximum continuous collector current (Ic) for the BC857B,215 is 0.2A.
The operating temperature range for the BC857B,215 is -65°C to 150°C.
The BC857B,215 is supplied in a SOT-23 surface-mount (SMD) package.
The RoHS status of the BC857B,215 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BC857B,215 is 1.
