| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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258,286 pcs
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258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present | |
| Tape & Reel | |
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The Toshiba TPC6108TE85L,F is a P Channel Power MOSFET designed for various electronic applications. It offers a drain-source voltage of -30V and a continuous drain current of 4.5A. The MOSFET has a typical on-state resistance of 60 MOhm and a power dissipation of 2.2W.
This component is housed in a SOT-23-6 package, suitable for surface-mount designs. The typical gate-source threshold voltage is 2V, with a maximum gate-source voltage rating of -20V. The Rds(on) is measured at a gate-source voltage of 10V.
Key electrical characteristics include a typical drain-source voltage of 30V and a maximum continuous drain current of -4.5A. The typical threshold voltage is 2V, and the on-state resistance is 60 MOhm at 10Vgs. The power dissipation is rated at 2.2W.
The TPC6108TE85L,F is specified as RoHS3 Compliant, with an MSL rating of 1 Unlimited, and REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is -30V typical and maximum.
The continuous drain current is 4.5A typical and -4.5A maximum.
The on-state resistance is 60mOhm typical.
The gate-source threshold voltage is 2V typical.
The package is SOT-23-6.
The transistor polarity is P-Channel.
The power dissipation is 2.2W typical.