| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,011 pcs
|
13011 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Ambient Temperature | |
| Automotive Grade | |
| Junction Temperature | |
| Mounting Type | |
| Storage Temperature |
The Nexperia BC856BW-Q is a PNP general-purpose transistor designed for switching and amplification applications. It comes in a very small SOT323 (SC-70) surface-mounted device plastic package.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -65 V and a continuous collector current (IC) of -100 mA. The peak collector current (ICM) can reach -200 mA. The DC current gain (hFE) for the BC856BW-Q is specified between 220 and 475 under typical test conditions (VCE = 5 V; IC = 2 mA).
This transistor is qualified according to AEC-Q101 and recommended for automotive applications. Its compact SOT323 package makes it suitable for space-constrained designs. The operating temperature range is from -65 °C to 150 °C, with a maximum junction temperature of 150 °C and a total power dissipation of 200 mW at 25 °C ambient temperature when mounted on a standard FR4 PCB.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-65 V (open base).
-100 mA continuous, -200 mA peak.
220 to 475 at VCE = 5 V, IC = 2 mA.
SC-70 (SOT323) surface mount.
Maximum junction, ambient, and storage temperatures are all 150 °C.
200 mW at 25 °C ambient (FR4 PCB).
Collector-base is -80 V; emitter-base is -5 V.