BC850B,215

The BC850B,215 is an NPN bipolar junction transistor manufactured by Nexperia USA Inc. It is designed for general-purpose amplifier and switching applications. Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 45V, a continuous collector current (Ic) of 100mA, and a power dissipation rating of 250mW. The transistor features a transition frequency (ft) of 100MHz, making it suitable for low-frequency amplification. DC current gain (hFE) is typically 200 minimum at 2mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 600mV at 5mA base current and 100mA collector current. The device is designed for surface mount assembly and is available in a TO-236-3 / SC-59 / SOT-23-3 package, with the supplier device package designated as TO-236AB. The operating junction temperature range is up to 150°C. Typical applications include signal amplification, switching circuits, and driver stages in low-power electronic devices. The BC850B,215 is a common choice for general-purpose use due to its balanced performance and small footprint.