2SB1412TLR
ROHM Semiconductor
PNP bipolar junction transistor rated for -20V collector-emitter voltage and -5A collector current. Surface mount package CPT3.
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3,349 pcs
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3349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC848CLT1 is an NPN silicon general purpose transistor from On Semiconductor, part of the BC848 family. Its maximum ratings include a collector-emitter voltage of 30V, a continuous collector current of 100mA, and a DC current gain (hFE) ranging from 420 to 800 at IC=2mA, VCE=5V.
Thermal characteristics include a total device dissipation of 225mW on FR-5 board and 300mW on alumina substrate, with corresponding thermal resistances of 556°C/W and 417°C/W. The junction and storage temperature range is -55 to +150°C. The device is rated for ESD protection of over 4000V (Human Body Model) and over 400V (Machine Model).
The transistor is offered in a SOT-23 surface mount package with gull-wing leads. It has a Moisture Sensitivity Level of 1 (unlimited) and is available in Pb-Free packages. This component is suitable for general purpose switching and amplification applications in low-power consumer and industrial electronics.
| Qty | Low | High |
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| 7,869+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
SOT-23 surface mount package.
-55 to +150°C.
Listed as RoHS3 Compliant, but unverified. The datasheet mentions Pb-Free packages.
420 to 800 at IC=2mA, VCE=5V.
>4000V Human Body Model, >400V Machine Model.
225mW on FR-5 board, 300mW on alumina substrate.