2SB1412TLR PNP bipolar junction transistor rated for -20V collector-emitter voltage and -5A collector current. Surface mount package CPT3.
Mfr Part #:

2SB1412TLR

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
PNP bipolar junction transistor rated for -20V collector-emitter voltage and -5A collector current. Surface mount package CPT3.
Total Stock: 4,199 pcs
$ Price Range: $0.48 - $1.60

2SB1412TLR Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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4,199 pcs
4199 pcs On Request 1 On Request On Request 03+04+ On Request On Request

2SB1412TLR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Pulse)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Junction Temperature (TJ)
Lead Style
Medical Grade
Mounting Method
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Package Type
Power
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Tape and Reel
Termination Style
Transistor Type
Transition Frequency (Typical @ VCE=-6 V, IE=50 mA, f=100 MHz)
Vce Sat (Typical @ IC/IB=-4 A/-0.1 A)
Vce Saturation (Max) @ Ib, Ic
Voltage
hfe (Typical @ VCE=-2 V, IC=-500 mA)

2SB1412TLR Description

Short technical summary and product information.

The 2SB1412TLR is a PNP silicon epitaxial planar transistor from ROHM Semiconductor designed for low-frequency applications. It features a collector-emitter voltage rating of -20V, a DC collector current of -5A (pulse up to -10A), and a power dissipation of 1W (2W on ceramic board).

 

The transistor offers a minimum DC current gain (hFE) of 180 at 500mA and 2V, with a typical gain range of 120 to 390. Its low collector-emitter saturation voltage of -0.35V typical (at IC/IB = -4A/-0.1A) makes it suitable for efficient switching. The transition frequency is 60 MHz typical.

 

It is housed in a CPT3 surface mount package (TO-252-3, DPak, SC-63) and is complementary to the 2SD2098, 2SD2118, and 2SD2097 NPN transistors. The junction temperature is rated up to 150°C, with a storage temperature range of -55°C to 150°C.

2SB1412TLR Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2SB1412TLR - PNP Silicon Transistor
Subcategory: PNP Transistor

2SB1412TLR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected

2SB1412TLR Estimated Pricing

Qty Low High
1+ $1.60 $1.60
10+ $1.01 $1.01
100+ $0.68 $0.68
500+ $0.53 $0.53
1,000+ $0.49 $0.49
2,500+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1412TLR Features

  • PNP silicon epitaxial planar transistor.
  • Low collector-emitter saturation voltage (-0.35V typ).
  • High DC current gain (hFE 180 min).
  • Surface mount CPT3 package.
  • Complementary to 2SD2098 series.

2SB1412TLR Applications

  • Used in low frequency switching circuits.
  • Ideal for power management applications.
  • Suitable for output stages of audio amplifiers.
  • Used in general purpose amplification.

2SB1412TLR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

The collector-emitter voltage (VCEO) is -20V.

What is the collector current rating?

The DC collector current is -5A; pulse current is -10A (Pw=10ms).

What is the package type?

The package is CPT3 (TO-252-3, DPak, SC-63).

What is the operating junction temperature?

The maximum junction temperature is 150°C.

What is the DC current gain?

The minimum DC current gain (hFE) is 180 at IC=-500mA, VCE=-2V. Typical range is 120 to 390.

Is this part RoHS compliant?

RoHS3 compliance is listed but unverified for this part.

What is the transition frequency?

The typical transition frequency (fT) is 60 MHz per the datasheet.

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