| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,020 pcs
|
26020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC847QAPNZ is an NPN/PNP general-purpose transistor array from Nexperia, combining complementary bipolar junction transistors in a single leadless DFN1010B-6 (SOT1216) surface-mount package. Each transistor is rated for a collector-emitter breakdown voltage of 45 V and a continuous collector current of 100 mA, with a peak collector current of 200 mA.
The array provides a DC current gain (hFE) of 200 to 450 at VCE = 5 V and IC = 2 mA, and a maximum collector-emitter saturation voltage of 100 mV at IB = 500 µA and IC = 10 mA. It is qualified to AEC-Q101 and has a maximum power dissipation of 350 mW for the package and 230 mW per transistor at 25 °C ambient.
The compact 0.37 mm high DFN1010B-6 package reduces component count and pick-and-place cost, making it suitable for general-purpose switching and amplification in space-constrained mobile and automotive applications. The operating temperature range is -55 °C to 150 °C, with a storage temperature range of -65 °C to 150 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.38 | $0.38 |
| 10+ | $0.23 | $0.23 |
| 100+ | $0.15 | $0.15 |
| 500+ | $0.11 | $0.11 |
| 1,000+ | $0.09 | $0.09 |
| 2,500+ | $0.08 | $0.08 |
| 5,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BC847QAPNZ is supplied in a leadless DFN1010B-6 (SOT1216) surface-mount package with 6 terminals and a 0.37 mm height.
Each transistor has a collector-emitter breakdown voltage (VCEO) of 45 V with the base open.
The continuous collector current rating is 100 mA, with a peak collector current of 200 mA.
Operating temperature range is -55 °C to 150 °C; storage range is -65 °C to 150 °C.
The DC current gain is 200 to 450 at VCE = 5 V and IC = 2 mA, at 25 °C ambient.
The product is listed as RoHS3 compliant in existing database records; this has not been independently verified.
Yes, the datasheet indicates AEC-Q101 qualification.