| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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109,020 pcs
|
109020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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BC847BVN,115 is a general purpose NPN/PNP bipolar transistor array from Nexperia USA Inc. The device integrates two complementary transistors in a single SOT-666 ultra-small surface-mount package, with a total power dissipation of 300 mW and 200 mW per transistor. It is designed for general purpose switching and amplification applications, including complementary MOSFET drivers in switch mode power supplies and complementary drivers for audio amplifiers.
Electrical characteristics include a maximum collector-emitter voltage (VCEO) of 45 V, a maximum collector current of 100 mA, and a DC current gain (hFE) of at least 200 at IC=2 mA and VCE=5 V. Maximum collector-base voltage is 50 V, emitter-base voltage is 5 V, and VCE saturation is 300 mV at IC=100 mA and IB=5 mA. The transition frequency is stated at 100 MHz.
The SOT-666 package measures 1.6 mm x 1.2 mm x 0.55 mm with 0.5 mm lead pitch, which reduces required PCB area and pick-and-place costs compared to two separate SC-75/SC-89 devices. It is rated for a maximum junction temperature of 150°C, storage temperature from -65°C to 150°C, and a thermal resistance from junction to ambient of 416 K/W on a standard FR4 PCB footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
| 10+ | $0.31 | $0.31 |
| 100+ | $0.20 | $0.20 |
| 500+ | $0.15 | $0.15 |
| 1,000+ | $0.13 | $0.13 |
| 2,000+ | $0.12 | $0.12 |
| 4,000+ | $0.09 | $0.09 |
| 8,000+ | $0.07 | $0.07 |
| 24,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Collector-emitter voltage (VCEO) is 45 V, collector-base voltage (VCBO) is 50 V, and emitter-base voltage (VEBO) is 5 V.
SOT-666 surface mount package with 0.5 mm lead pitch.
Maximum junction temperature is 150°C, and storage temperature range is -65°C to 150°C.
The part is listed as RoHS3 compliant in the database, though this is not verified in the datasheet.
Minimum hFE is 200 at VCE=5V and IC=2mA.
Total power dissipation is 300 mW, with 200 mW per transistor at 25°C ambient.
The transition frequency is 100 MHz.