| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC847BV,115 is an NPN general purpose double transistor from Nexperia, designed for space-constrained applications. It integrates two matched NPN transistors in an ultra-small SOT666 flat lead plastic package measuring 1.6 mm x 1.2 mm x 0.55 mm.
Key electrical specifications include a maximum collector-emitter voltage of 45 V, collector current up to 100 mA (200 mA peak), and a DC current gain (hFE) range of 200 to 450 at Vce = 5 V, Ic = 2 mA. The collector-emitter saturation voltage is typically 300 mV at Ib = 5 mA, Ic = 100 mA. Total power dissipation per device is 300 mW, with 200 mW per transistor.
The device offers improved thermal behavior due to flat leads and excellent coplanarity. It is suitable for general purpose switching and amplification, reducing board space and pick-and-place costs by replacing two discrete SC-75/SC-89 packaged transistors. The PNP complement is BC857BV.
Packaged in SOT-563 or SOT-666, the BC847BV,115 is surface mountable with a lead pitch of 0.5 mm. It operates over a junction temperature range of -65 °C to 150 °C and is RoHS3 compliant with MSL 1 unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
| 10+ | $0.26 | $0.26 |
| 100+ | $0.16 | $0.16 |
| 500+ | $0.12 | $0.12 |
| 1,000+ | $0.11 | $0.11 |
| 2,000+ | $0.10 | $0.10 |
| 4,000+ | $0.08 | $0.08 |
| 24,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 45 V per transistor with open base.
The BC847BV,115 is available in SOT-563 and SOT-666 surface mount packages, with the supplier device package being SOT-666.
The ambient and storage temperature range is -65°C to 150°C, with a maximum junction temperature of 150°C.
The BC847BV,115 is marked as RoHS3 Compliant.
The DC current gain (hFE) is 200 to 450 at Vce = 5 V and Ic = 2 mA at 25°C.
The maximum collector-emitter saturation voltage is 300 mV at Ib = 5 mA and Ic = 100 mA.
Total power dissipation per device is 300 mW, and per transistor is 200 mW.