BC847BPN,125 NPN/PNP general-purpose transistor pair in a SOT363 (SC-88) SMD plastic package. Features 45V collector-emitter voltage and 100mA collector current.
Mfr Part #:

BC847BPN,125

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
NPN/PNP general-purpose transistor pair in a SOT363 (SC-88) SMD plastic package. Features 45V collector-emitter voltage and 100mA collector current.
✓ Total Stock: 84,000 pcs
$ Price Range: $0.05 - $0.25

BC847BPN,125 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
84,000 pcs
84000 pcs On Request 1 On Request On Request On Request On Request On Request

BC847BPN,125 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Spacing
Mounting Type
Operating Temperature
Pitch
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC847BPN,125 Description

Short technical summary and product information.

The BC847BPN is a dual NPN/PNP general-purpose transistor array from Nexperia, housed in a compact SOT363 (SC-88) surface-mount package. This device integrates two complementary transistors in a single 6-pin package, offering reduced board space and improved component matching. Each transistor features a maximum collector-emitter voltage (VCEO) of 45 V and a collector current (IC) rating of 100 mA. The DC current gain (hFE) is specified between 200 and 450 at VCE = 5 V and IC = 2 mA, ensuring consistent amplification performance. The collector-emitter saturation voltage is typically 300 mV at IC = 100 mA and IB = 5 mA, enabling efficient low-voltage switching. With a transition frequency (ft) of 100 MHz, these transistors are suitable for general-purpose switching and amplification applications up to medium frequencies. The device is rated for a maximum power dissipation of 300 mW at 25°C ambient temperature. The SOT363 package features a 0.65 mm lead pitch and compact body dimensions of 2.1 mm x 1.25 mm x 0.95 mm, making it ideal for space-constrained designs. The complementary pair configuration eliminates mutual interference between the two transistors and simplifies PCB layout for push-pull and differential amplifier stages.

BC847BPN,125 Quick Information

Product Type: Bipolar Transistor Array
Canonical Name: BC847BPN NPN/PNP General-Purpose Transistor Array
Subcategory: NPN/PNP Complementary Pair

BC847BPN,125 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC847BPN,125 Estimated Pricing

Qty Low High
1+ $0.25 $0.25
10+ $0.15 $0.15
100+ $0.09 $0.09
500+ $0.06 $0.06
1,000+ $0.06 $0.06
3,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC847BPN,125 Features

  • Dual NPN/PNP transistor array in SOT363 package.
  • 45V collector-emitter voltage rating.
  • 100mA maximum collector current per transistor.
  • DC current gain range of 200 to 450.
  • Surface mount SOT363 package with 0.65mm pitch.

BC847BPN,125 Applications

  • General-purpose switching and amplification.
  • Reduces component count and board space.
  • Suitable for push-pull and differential amplifier stages.
  • Ideal for battery-powered portable devices.
  • Used in signal conditioning circuits.

BC847BPN,125 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum operating voltage?

The maximum collector-emitter voltage (VCEO) is 45 V.

What is the package type?

The device is available in a 6-TSSOP (SOT363) surface-mount package.

What is the maximum operating temperature?

The maximum junction temperature is 150°C.

Is the BC847BPN RoHS compliant?

Yes, the BC847BPN is listed as RoHS3 compliant.

What is the DC current gain (hFE) range?

The DC current gain is between 200 and 450 at VCE = 5 V and IC = 2 mA.

What is the maximum collector current?

The maximum collector current per transistor is 100 mA.

What is the transition frequency?

The transition frequency (ft) is 100 MHz.

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