BC847BLT1G BC847BLT1G is an NPN general purpose transistor from On Semiconductor. It features a 45V collector-emitter voltage, 100mA continuous collector current, and a 100MHz transition frequency.
Mfr Part #:

BC847BLT1G

Available from 13 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC847BLT1G is an NPN general purpose transistor from On Semiconductor. It features a 45V collector-emitter voltage, 100mA continuous collector current, and a 100MHz transition frequency.
Total Stock: 932,631 pcs
$ Price Range: $0.02 - $0.13

BC847BLT1G Available from 13 distributors

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BC847BLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Rating (Human Body Model)
ESD Rating - Machine Model
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C)
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC847BLT1G Description

Short technical summary and product information.

The BC847BLT1G is an NPN silicon general purpose transistor manufactured by On Semiconductor. It is designed for general purpose switching and amplification applications.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 45V, a maximum collector-base voltage (VCBO) of 50V, and a maximum emitter-base voltage (VEBO) of 6.0V. The device can handle a continuous collector current of up to 100mA. It offers a minimum DC current gain (hFE) of 200 at 2mA and 5V, and a typical transition frequency of 100MHz. The maximum collector-emitter saturation voltage is 600mV at 5mA base current and 100mA collector current.

 

The transistor is housed in a surface mount SOT-23-3 package (also known as TO-236-3 or SC-59). It has a maximum power dissipation of 300mW on an alumina substrate and 225mW on an FR-5 board. The operating junction temperature range is -55°C to +150°C. The device is rated with an ESD capability of >4000V for the Human Body Model and >400V for the Machine Model.

BC847BLT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC846ALT1G Series
Canonical Name: BC847BLT1G NPN General Purpose Transistor
Subcategory: Single BJT

BC847BLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BC847BLT1G Estimated Pricing

Qty Low High
1+ $0.13 $0.13
10+ $0.08 $0.08
100+ $0.05 $0.05
500+ $0.04 $0.04
1,000+ $0.03 $0.03
3,000+ $0.02 $0.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC847BLT1G Features

  • NPN silicon general purpose transistor.
  • 45V maximum collector-emitter voltage.
  • 100mA continuous collector current.
  • 100MHz typical transition frequency.
  • Surface mount SOT-23-3 package.

BC847BLT1G Applications

  • Used in general purpose switching circuits.
  • Suitable for signal amplification stages.
  • Ideal for low-power consumer electronics.
  • Applicable in automotive control modules.

BC847BLT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BC847BLT1G?

The maximum collector-emitter voltage (VCEO) is 45V.

What is the maximum collector current for the BC847BLT1G?

The maximum continuous collector current is 100mA.

What is the package type for the BC847BLT1G?

The BC847BLT1G is available in a surface mount SOT-23-3 package (also known as TO-236-3 or SC-59).

What is the operating temperature range of the BC847BLT1G?

The operating junction temperature range is -55°C to +150°C.

Is the BC847BLT1G RoHS compliant?

Yes, the BC847BLT1G is RoHS3 compliant and Pb-Free.

What is the transition frequency of the BC847BLT1G?

The typical transition frequency is 100MHz.

What is the DC current gain (hFE) of the BC847BLT1G?

The minimum DC current gain (hFE) is 200 at a test condition of Ic=2mA and Vce=5V.

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