| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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37 pcs
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37 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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This NPN bipolar junction transistor from Nexperia, model BC847W-QX, is suitable for various electronic applications requiring a surface mount component. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V.
The transistor has a maximum power dissipation of 200 mW and a transition frequency of 100 MHz. The Vce saturation is specified at 400mV maximum under specific test conditions (5mA Ib, 100mA Ic), and its DC current gain (hFE) is a minimum of 110 at 2mA collector current and 5V Vce.
Packaged in a compact SOT-323 surface mount case, this component is supplied on tape and reel. It operates within a temperature range of up to 150°C (TJ).
Key electrical characteristics include a low collector cutoff current of 15nA (ICBO). The component is designated as 'Automotive' grade.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the BC847W-QX is 100 mA.
The collector-emitter breakdown voltage (Vceo) for the BC847W-QX is 45 V.
The maximum power dissipation for the BC847W-QX is 200 mW.
The operating temperature range for the BC847W-QX is up to 150°C (TJ).
The BC847W-QX is supplied in a SOT-323 surface mount package.