| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,700 pcs
|
4700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,966 pcs
|
1966 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Storage Temperature | |
| Tape & Reel | |
| Transistor Type |
The Nexperia BC847W-QX is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It features a collector-emitter breakdown voltage of 45V and can handle a maximum collector current of 100mA. The transistor has a maximum power dissipation of 200mW and a transition frequency of 100MHz.
This component is housed in a compact SOT-323 surface mount package, making it ideal for space-constrained designs. The operating temperature range is up to 150°C (TJ). The BC847W-QX exhibits a minimum DC current gain (hFE) of 110 at 2mA collector current and 5V collector-emitter voltage. Its Vce saturation is a maximum of 400mV at 5mA base current and 100mA collector current, with a low collector cutoff current of 15nA (ICBO).
Designed for reliability, it operates within a wide temperature range and is packaged in tape and reel for automated assembly processes. This transistor is a versatile component for general-purpose amplification and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 45V.
The maximum collector current is 100mA.
The maximum power dissipation is 200mW.
The operating temperature is up to 150°C (TJ).
The BC847W-QX is in a SOT-323 surface mount package.