| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Industrial Grade | |
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| Tape & Reel | |
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The Nexperia BC846S,125 is an NPN general purpose double transistor in a very small SOT363 (SC-88) plastic six-lead package. It contains two electrically isolated transistors in one package, reducing component count and board space while ensuring no mutual interference between the transistors.
Key electrical specifications per transistor include a maximum collector-emitter voltage (VCEO) of 65V, collector current (IC) of 100 mA, and a DC current gain (hFE) of 110 minimum at VCE=5V, IC=2mA. The device offers a transition frequency of 100 MHz typical, making it suitable for general purpose switching and small signal amplification applications.
The transistor is housed in a surface-mount SOT363 (TSSOP6) package with body dimensions 2.1 mm x 1.25 mm x 0.95 mm and a lead pitch of 0.65 mm. It operates over a junction temperature range of -65°C to 150°C and has a total power dissipation of 300 mW per device (220 mW per transistor) when mounted on an FR4 PCB.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.20 | $0.20 |
| 10+ | $0.12 | $0.12 |
| 100+ | $0.08 | $0.08 |
| 500+ | $0.06 | $0.06 |
| 1,000+ | $0.05 | $0.05 |
| 3,000+ | $0.05 | $0.05 |
| 6,000+ | $0.04 | $0.04 |
| 9,000+ | $0.03 | $0.03 |
| 24,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) with open base is 65 V per transistor.
The BC846S,125 is housed in a surface-mount SOT363 (TSSOP6) package with 6 leads and a 0.65 mm pitch.
The operating temperature range is -65°C to 150°C (junction temperature).
The part is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.
The minimum DC current gain (hFE) is 110 at VCE = 5 V and IC = 2 mA at 25°C ambient.
The maximum continuous collector current (IC) is 100 mA per transistor, with a peak current (ICM) of 200 mA for single pulses ≤1 ms.
The total power dissipation per device is 300 mW (with both transistors operating) and 220 mW per transistor, when mounted on an FR4 PCB at Tamb ≤ 25°C.