| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
73,020 pcs
|
73020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC846BPN-QX is a general-purpose NPN/PNP transistor pair from Nexperia, designed for switching and amplification applications. Each transistor features a maximum collector-emitter voltage of 65V and a continuous collector current of 100mA, with a peak current capability of 200mA. The DC current gain (hFE) is specified at 200 minimum and 450 maximum under test conditions of VCE = 5V and IC = 2mA at 25°C, ensuring consistent performance across the pair.
This device is housed in a compact SOT363 (SC-88) surface-mount package with six leads, measuring 2.1mm x 1.25mm x 0.95mm body and 0.65mm pitch. The total power dissipation is 200mW per transistor (300mW per device) at 25°C ambient on an FR4 PCB. The operating junction temperature range is -55°C to 150°C, with a storage range of -65°C to 150°C.
The transistor pair offers low collector-emitter saturation voltage (300mV max at 100mA) and a transition frequency of 100MHz, making it suitable for general-purpose switching and amplification circuits. It is qualified to AEC-Q101 for automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
| 10+ | $0.16 | $0.16 |
| 100+ | $0.10 | $0.10 |
| 500+ | $0.07 | $0.07 |
| 1,000+ | $0.06 | $0.06 |
| 3,000+ | $0.05 | $0.05 |
| 6,000+ | $0.05 | $0.05 |
| 9,000+ | $0.04 | $0.04 |
| 24,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 65V per transistor, with open base.
The DC current gain is 200 minimum, 300 typical, and 450 maximum for the NPN transistor, and 200 minimum, 290 typical, and 450 maximum for the PNP transistor, measured at VCE = 5V and IC = 2mA at 25°C.
It is supplied in a 6-TSSOP, SC-88, SOT-363 surface-mount package.
The junction temperature range is -55°C to 150°C, with a storage temperature range of -65°C to 150°C.
Yes, it is AEC-Q101 qualified as verified in the datasheet.
The transition frequency is 100 MHz.
The maximum continuous collector current is 100mA per transistor, with a peak current of 200mA.