MMBT2222ALT1G
On Semiconductor
The MMBT2222ALT1G is an NPN bipolar junction transistor from ON Semiconductor. It features a 40V collector-emitter voltage and a 600mA continuous collector current.
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5,704 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC846ALT1 is an NPN silicon general purpose transistor from On Semiconductor, part of the BC846 series. It features a maximum collector-emitter voltage of 65V, collector-base voltage of 80V, and emitter-base voltage of 6.0V. The continuous collector current is rated at 100mA.
Power dissipation is 225mW on FR-5 board (derate 1.8mW/°C above 25°C) and 300mW on alumina substrate (derate 2.4mW/°C). Thermal resistance junction-to-ambient is 556°C/W on FR-5 and 417°C/W on alumina. The junction and storage temperature range is -55°C to +150°C.
The transistor is ESD rated at >4000V Human Body Model and >400V Machine Model. Moisture Sensitivity Level is 1 (unlimited floor life). The device is supplied in a surface-mount SOT-23 package (Case 318) and is suitable for general purpose switching and amplification applications.
65V maximum for the BC846 variant.
SOT-23 surface-mount package (Case 318).
-55°C to +150°C junction and storage temperature range.
The datasheet indicates Pb-free packages are available, but does not explicitly state RoHS compliance. The component is listed as RoHS3 compliant in some databases with low confidence.
100mA continuous.
>4000V Human Body Model, >400V Machine Model.
MSL 1 (unlimited floor life).
