| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Power Dissipation | |
| Storage Temperature |
The BC559B is a PNP General Purpose Silicon Epitaxial Planar Transistor. It is designed for universal applications and housed in a TO-92 plastic case.
Key electrical characteristics include a maximum Collector-Emitter voltage (VCEO) of 30V and a continuous Collector current (IC) of 100mA. The device offers a maximum power dissipation of 500mW. The DC current gain (hFE) ranges from 110 to 220 at VCE = 5V and IC = 2mA.
This transistor operates within a junction temperature range of -55°C to +150°C and a storage temperature range of -55°C to +150°C. The plastic material used for the case has a UL classification of 94V-0. Standard packaging is in an ammo pack.
Applications for the BC559B include general-purpose amplification and switching circuits where a PNP transistor is required. Its TO-92 package is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 30V.
It comes in a TO-92 package.
The maximum collector current is 100mA.
The power dissipation limit is 500mW.
The junction temperature limit is 150°C.
RoHS compliance status is unverified.