| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC558A from Toshiba is a PNP silicon epitaxial planar transistor designed for universal use. Encased in a standard TO-92 plastic package, this component is suitable for through-hole mounting.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 30V and a continuous collector current (IC) of 100mA. The device offers a maximum power dissipation of 500mW and a frequency response up to 150MHz. The DC current gain (hFE) typically ranges from 110 to 220 at 2mA collector current.
With a junction temperature rating of 150°C and a storage temperature range of -55°C to 150°C, the BC558A is built for reliable operation. Its TO-92 package is convenient for breadboarding and through-hole PCB assembly. The material of the plastic case has a UL classification of 94V-0.
This transistor is well-suited for a wide array of amplification and switching applications in consumer electronics, industrial controls, and general electronic designs where a PNP transistor with moderate voltage and current handling is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC558A is 30V.
The BC558A has a continuous collector current (IC) rating of 100mA.
The maximum power dissipation (Ptot) for the BC558A is 500mW.
The BC558A is supplied in a TO-92 plastic package.
The typical DC current gain (hFE) for the BC558A at VCE = 5V and IC = 2mA is between 110 and 220.
The BC558A has a frequency of 150MHz.