| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| Power Dissipation |
The BC558C from Toshiba is a PNP bipolar junction transistor (BJT) housed in a TO-92 package. This industrial-grade component is suitable for various control and signal processing applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 30V and a continuous collector current (IC) of 100mA. It offers a typical DC current gain (hFE) of 400 at 5V VCE and 100mA IC. The transistor has a maximum power dissipation of 500mW and a maximum junction temperature of 150°C.
With a typical gain bandwidth product (fT) of 150MHz at 10mA and 5V, the BC558C is capable of handling moderate frequency signals. Its collector saturation voltage (VCEsat) is a maximum of 250mV at 100mA IC and 5mA IB.
The BC558C is lead-free and halogen-free, and its RoHS status is compliant. It is supplied in a TO-92 through-hole package with a standard package quantity of 4000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC558C is 30V DC.
The BC558C can handle a continuous collector current (IC) of 100mA.
The typical DC current gain (hFE) for the BC558C is 400 when measured at 5V VCE and 100mA IC.
The BC558C has a maximum junction temperature of 150°C.
The BC558C is supplied in a TO-92 package.
Yes, the BC558C is RoHS3 compliant.
Yes, the BC558C is lead-free.