BC558C The Diotec Semiconductor BC558C is a PNP bipolar transistor in a TO-92 package. It features a 30V collector-emitter voltage and 100mA collector current.
Mfr Part #:

BC558C

Available from 1 distributors
Mfr Name: Diotec Semiconductor
Diotec Semiconductor
The Diotec Semiconductor BC558C is a PNP bipolar transistor in a TO-92 package. It features a 30V collector-emitter voltage and 100mA collector current.
Total Stock: 2,000 pcs
$ Price Range: $0.77

BC558C Available from 1 distributor

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2,000 pcs
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BC558C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Junction Temperature
Mounting Type
Power Dissipation

BC558C Description

Short technical summary and product information.

The Diotec Semiconductor BC558C is a PNP bipolar transistor designed for general-purpose applications. It is housed in a standard TO-92 package, suitable for through-hole mounting.

 

Key electrical characteristics include a maximum collector-emitter voltage (V CEO) of 30V and a continuous collector current (I C) of 100mA. The device offers a power dissipation of 500mW at ambient temperature and a typical DC current gain (h FE) of 400 at 5V V CE and 100mA I C. The junction temperature can reach up to 150°C.

 

This transistor is lead-free and halogen-free, complying with RoHS standards. Its compact TO-92 package makes it suitable for various industrial and consumer electronics applications where space is a consideration.

BC558C Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: BC558C PNP Bipolar Transistor
Subcategory: BJT - Single

BC558C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC558C Estimated Pricing

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1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC558C Features

  • PNP bipolar transistor in TO-92 package.
  • 30V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • 500mW maximum power dissipation.
  • Typical DC current gain of 400.

BC558C Applications

  • Suitable for low-power switching applications.
  • Ideal for signal amplification in audio devices.
  • Used in industrial control and automation circuits.
  • Applicable in battery-powered electronic devices.

BC558C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the BC558C?

The collector-emitter voltage (V CEO) is 30V DC.

What is the maximum collector current for the BC558C?

The maximum continuous collector current (I C) is 100mA.

What is the power dissipation of the BC558C?

The power dissipation (P tot) is 0.5W at ambient temperature.

What is the DC current gain (h FE) of the BC558C?

The typical DC current gain (h FE) is 400 at 5V V CE and 100mA I C.

What is the maximum junction temperature for the BC558C?

The maximum junction temperature (T j) is 150°C.

What package type is the BC558C available in?

The BC558C is available in a TO-92 package.

Is the BC558C RoHS compliant?

Yes, the BC558C is RoHS3 Compliant.

BC558C Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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BC558C
BC558C
Toshiba
The Toshiba BC558C is a PNP bipolar junction transistor designed for general-purpose amplification and switching. It features a 30V collector-emitter voltage and 100mA collector current.
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