| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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97,500 pcs
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97500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
261 pcs
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261 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation | |
| Thermal Resistance |
The BC337-40 is a silicon NPN transistor manufactured by ON Semiconductor, suitable for general-purpose amplifier and switching applications. It is housed in a TO-92 package.
Key electrical characteristics include a Collector-Emitter Voltage (V CEO) of 45V and a Continuous Collector Current (I C) of up to 800mA. The device offers a maximum power dissipation of 625mW at 25°C ambient temperature. Its operating and storage junction temperature range is from -65°C to +150°C.
This transistor is designed for ease of use in various electronic circuits. The TO-92 package is a common through-hole package, facilitating easy mounting on printed circuit boards. The datasheet provides detailed electrical characteristics, including saturation voltage and current gain (hFE) under specific test conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (V CEO) for the BC337-40 is 45V.
The maximum continuous collector current (I C) for the BC337-40 is 800mA.
The BC337-40 is available in a TO-92 package.
The operating and storage junction temperature range for the BC337-40 is -65°C to +150°C.
The DC Current Gain (hFE) for the BC337-40, tested at V CE=1.0V and IC=100mA, ranges from 250 to 630.
The transition frequency (fT) of the BC337-40 is 210 MHz at V CE=5.0V, IC=10mA, and f=100MHz.