| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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608 pcs
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608 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor BC337-40 is a silicon NPN transistor designed for general purpose amplifier and switching applications. It is housed in a TO-92 package.
Key electrical characteristics include a collector-emitter voltage (V CEO) of 45V and a continuous collector current (I C) of 800mA. The device offers a typical DC current gain (hFE) ranging from 250 to 630 at 1.0V V CE and 100mA I C. Its transition frequency (fT) is 210 MHz at 5.0V V CE and 10mA I C.
With a power dissipation rating of 625 mW and a thermal resistance (junction-to-ambient) of 200 °C/W, the BC337-40 is suitable for various electronic circuits. The operating and storage junction temperature range is -65 to +150 °C.
This transistor is designed for through-hole mounting, making it suitable for breadboarding and through-hole PCB assembly. Its robust specifications make it a reliable choice for general-purpose amplification and switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V CEO) for the BC337-40 is 45V.
The continuous collector current (I C) for the BC337-40 is 800mA.
The typical DC current gain (hFE) of the BC337-40 is between 250 and 630 at 1.0V V CE and 100mA I C.
The operating and storage junction temperature range for the BC337-40 is -65 to +150 °C.
The BC337-40 is available in the TO-92 case.