DistyParts Icon
BAV70W The NXP Semiconductors BAV70W is a high-speed switching double diode designed for general-purpose switching applications. It features a reverse voltage rating of 100V and a fast reverse recovery time of 4ns.
Mfr Part #:

BAV70W

Available from 5 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BAV70W is a high-speed switching double diode designed for general-purpose switching applications. It features a reverse voltage rating of 100V and a fast reverse recovery time of 4ns.
✓ Total Stock: 8,873 pcs
$ Price Range: $0.99

BAV70W Available from 5 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BAV70W Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Storage Temperature
View Similar Products (0)

BAV70W Description

Short technical summary and product information.

The BAV70W from NXP Semiconductors is a high-speed switching double diode encapsulated in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package. This component is designed for high-speed and general-purpose switching applications.

 

Key electrical characteristics include a maximum reverse voltage of 100V and a typical reverse recovery time of 4ns. The diode also exhibits low capacitance, rated at a maximum of 1.5 pF, and low leakage current. For per-diode operation, it can handle a forward current of up to 175mA at 25°C ambient temperature, with a total power dissipation of 200mW per diode at 25°C.

 

The device operates within a junction temperature range of -65°C to 150°C and an ambient temperature range of -65°C to 150°C. The SC-70 package is suitable for surface mounting, making it ideal for space-constrained designs.

 

This double diode is suitable for various high-speed switching applications where fast response times and small package size are critical.

BAV70W Quick Information

Product Type: Double Diode
Canonical Name: High-speed switching double diode
Subcategory: RF Diode

BAV70W Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BAV70W Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BAV70W Features

  • High switching speed: trr ≤ 4 ns
  • Low capacitance: Cd ≤ 1.5 pF
  • Reverse voltage up to 100 V
  • Very small SMD plastic package
  • Suitable for general-purpose switching

BAV70W Applications

  • Suitable for high-speed switching circuits.
  • Used in general-purpose switching applications.
  • Ideal for RF signal switching and filtering.
  • Applicable in low-capacitance switching environments.

BAV70W FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage for the BAV70W diode?

The maximum reverse voltage for the BAV70W diode is 100 V.

What is the reverse recovery time of the BAV70W diode?

The reverse recovery time for the BAV70W diode is 4 ns under the specified test conditions.

What is the diode capacitance of the BAV70W?

The diode capacitance (Cd) for the BAV70W is a maximum of 1.5 pF.

What is the maximum forward current for the BAV70W diode?

The maximum forward current per diode is 175 mA at 25°C ambient temperature.

What type of package is the BAV70W diode in?

The BAV70W diode is in an SC-70 (SOT-323) surface-mount plastic package.

BAV70W Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
BCX71
BCX71
N-A
The Nexperia BCX71H is a PNP general purpose transistor designed for low level, low noise applications. It features a maximum collector current of 100 mA and a collector-emitter voltage of up to 45 V.
View Part
BSN20BK
BSN20BK
Nexperia USA Inc.
The Nexperia BSN20BK is an N-channel Trench MOSFET in a SOT23 package. It offers a 60V drain-source voltage and fast switching capabilities.
View Part
BAS86
BAS86
Nexperia USA Inc.
The Nexperia BAS86 is a Schottky barrier single diode designed for ultra high-speed switching. It features a low forward voltage and high breakdown voltage.
View Part
RQJ0303PGDQA
RQJ0303PGDQA
Renesas
The Renesas RQJ0303PGDQA is a P-Channel MOS FET designed for power switching applications. It features low on-resistance and high-speed switching capabilities.
View Part
Home

Categories