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BAV70-QR BAV70-QR is a high-speed switching double diode array with common cathode configuration, rated for 100V reverse voltage and 215mA forward current per diode, packaged in SOT23.
Mfr Part #:

BAV70-QR

Available from 3 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
BAV70-QR is a high-speed switching double diode array with common cathode configuration, rated for 100V reverse voltage and 215mA forward current per diode, packaged in SOT23.
Total Stock: 282,020 pcs

BAV70-QR Available from 3 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
145,020 pcs
145020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
86,000 pcs
86000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
51,000 pcs
51000 pcs On Request 1 On Request On Request 25+ On Request On Request

BAV70-QR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance
Current
Diode Configuration
Forward Current
Forward Voltage
Junction Temperature
Mounting Type
Number of Pins
Operating Temperature
Package / Case
Package Description
Reverse Current
Reverse Recovery Time
Reverse Recovery Time (trr)
Reverse Voltage
Speed
Supplier Device Package
Technology
Thermal Resistance Junction-to-Ambient
Total Power Dissipation
Voltage

BAV70-QR Description

Short technical summary and product information.

BAV70-QR is a high-speed switching double diode array from Nexperia, containing two diodes in a common cathode configuration. It is designed for fast switching applications with a reverse recovery time of ≤4 ns and low capacitance of ≤1.5 pF. Each diode can handle a reverse voltage up to 100 V and a forward current of up to 215 mA. The device is housed in a small SOT23 (TO-236AB) surface-mount plastic package, making it suitable for compact designs.

 

This double diode is qualified according to AEC-Q101 and is recommended for automotive applications. Typical uses include high-speed switching and general-purpose switching circuits. The device features low leakage current and is RoHS compliant (unverified).

 

For thermal management, the total power dissipation is 250 mW when mounted on an FR4 PCB, with a junction-to-ambient thermal resistance of 500 K/W. The junction temperature limit is 150°C.

BAV70-QR Quick Information

Product Type: Diode Array
Canonical Name: BAV70-QR High-Speed Switching Double Diode
Subcategory: Switching Diode Array

BAV70-QR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BAV70-QR Features

  • Fast recovery time ≤4ns.
  • Low capacitance ≤1.5pF.
  • Reverse voltage rating 100V.
  • Forward current up to 215mA.
  • AEC-Q101 qualified for automotive.

BAV70-QR Applications

  • High-speed switching circuits.
  • General-purpose switching.
  • Signal processing.
  • Automotive electronics.

BAV70-QR FAQs

5 frequently asked questions generated from this part’s specifications.
What is the reverse recovery time of BAV70-QR?

The reverse recovery time (trr) is ≤4 ns under test conditions: IF = 10 mA, IR = 10 mA, IR(meas) = 1 mA, RL = 100 Ω, Tamb = 25°C.

What is the forward voltage of BAV70-QR?

The maximum forward voltage is 1.25 V at a forward current of 150 mA.

What is the maximum reverse voltage and forward current?

The maximum reverse voltage is 100 V per diode. The maximum forward current is 215 mA per diode at Tamb ≤ 25°C.

What package is BAV70-QR available in?

BAV70-QR is available in a SOT23 (TO-236AB) surface-mount plastic package with 3 terminals.

What is the diode configuration of BAV70-QR?

It contains 1 pair of diodes with common cathode configuration.

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