| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,811 pcs
|
1811 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,171 pcs
|
1171 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
170 pcs
|
170 pcs | On Request | 1 | On Request | On Request | 2239 | On Request | On Request |
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The NXP Semiconductors BAV23S,215 is a dual high-voltage switching diode encapsulated in a small Surface-Mounted Device (SMD) plastic package. This series is designed for high-speed switching at high voltages and general-purpose switching applications.
Key electrical characteristics include a repetitive peak reverse voltage (VRRM) of up to 250V and a continuous forward current (IF) of 225mA per diode. It offers a high switching speed with a reverse recovery time (trr) of 50ns and low capacitance (Cd) of 2pF. The reverse leakage current (IR) is a maximum of 100nA at 200V.
The BAV23S variant features a dual series configuration. It is housed in a TO-236AB, SOT-23 package suitable for surface mounting. This component is ideal for applications requiring fast and reliable high-voltage switching.
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are currently unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage (VRRM) is 250V.
The maximum forward current (IF) is 225mA.
The reverse recovery time (trr) is 50ns.
The diode capacitance (Cd) is 2pF.
The BAV23S,215 is available in a TO-236AB, SOT-23 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.