| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,626 pcs
|
2626 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | 741 | On Request | On Request | |
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BAV23,215 is a dual high-voltage switching diode encapsulated in a small Surface-Mounted Device (SMD) plastic package, specifically the SOT143B. This component is designed for high-speed switching at high voltages and general-purpose switching applications.
Key electrical characteristics include a repetitive peak reverse voltage (VRRM) of up to 250V and a maximum forward current (IF) of 225mA per diode. It offers a high switching speed with a reverse recovery time (trr) of 50ns and low capacitance (Cd) of 2pF. The reverse current (IR) is a maximum of 100nA at 200V reverse voltage.
This diode is suitable for applications requiring fast response times and high voltage handling capabilities. Its small SMD package makes it ideal for space-constrained designs. The BAV23,215 series offers various configurations, including common anode, common cathode, and series, to suit different circuit needs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage is 250 V.
The maximum forward current is 225 mA.
The reverse recovery time is 50 ns.
The capacitance is 2 pF.
The package type is SOT143B.