| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
966 pcs
|
966 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The BAV199W,115 from NXP Semiconductors is an epitaxial, medium-speed switching, double diode. The diodes are connected in series within a small SOT323 (SC-70) surface-mounted device (SMD) plastic package. This component is ideal for low-leakage current applications in surface-mounted circuits.
Key electrical specifications include a continuous reverse voltage of up to 75V and a repetitive peak reverse voltage of 85V. The forward current is rated at a maximum of 135mA for a single diode loaded and 110mA for a double diode loaded under specific thermal conditions. The device exhibits a low leakage current, typically 3 pA, and a switching time of approximately 0.8 µs.
Thermal characteristics are important for this device, with a total power dissipation of 150mW for a single diode loaded and 250mW for a double diode loaded at 90°C solder point temperature. The junction temperature is rated up to 150°C, and the ambient and storage temperatures range from -55°C to 150°C.
The BAV199W,115 is supplied in a compact SC-70 package, measuring 2 mm x 1.25 mm x 0.95 mm with a 1.3 mm pitch, making it suitable for space-constrained designs. The device is designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous reverse voltage is 75 V.
The typical reverse leakage current is 3 pA.
The typical switching time is 0.8 µs.
The maximum forward current is 135 mA for a single diode loaded and 110 mA for a double diode loaded.
It is supplied in a SOT323 (SC-70) surface-mounted device (SMD) plastic package.