| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,030 pcs
|
5030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
748 pcs
|
748 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Diode Capacitance | |
| Forward Current | |
| Junction Temperature | |
| Mounting Type | |
| Reverse Voltage | |
| Storage Temperature | |
| Thermal Resistance |
The NXP Semiconductors BAT721C is a planar Schottky barrier dual diode encapsulated in a SOT23 small surface-mounted device (SMD) plastic package. It integrates a guard ring for stress protection.
Key electrical characteristics include a maximum reverse voltage of 40V and a maximum forward current of 200mA per diode. The forward voltage is typically 550mV at 200mA, with lower values at reduced currents. Diode capacitance is rated at a maximum of 50pF at 1MHz and 0V reverse voltage.
This dual diode is suitable for applications requiring ultra-high-speed switching, line termination, voltage clamping, and reverse polarity protection. Its SOT23 package is designed for surface mounting.
Thermal characteristics include a junction temperature maximum of 125°C and a thermal resistance from junction to ambient of 500 K/W in free air.
| Qty | Low | High |
|---|---|---|
| 1+ | $165.89 | $165.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 40V.
The maximum forward current is 200mA.
The forward voltage is 550mV at 200mA.
The diode capacitance is 50pF at 1MHz and 0V reverse voltage.
The BAT721C is supplied in a SOT-23 surface-mount package.