| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,704 pcs
|
1704 pcs | On Request | 1 | On Request | On Request | 1214+ | On Request | On Request | |
|
33 pcs
|
33 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Diode Capacitance | |
| Forward Current | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Reverse Voltage | |
| Storage Temperature | |
| Thermal Resistance |
The NXP Semiconductors BAT721 is a planar Schottky barrier diode encapsulated in a SOT23 small surface-mounted device (SMD) plastic package. It is designed with an integrated guard ring for stress protection.
Key electrical characteristics include a maximum forward current of 200 mA and a maximum reverse voltage of 40 V. The forward voltage is typically low, with a maximum of 550 mV at 200 mA. The diode also exhibits low capacitance, making it suitable for high-speed applications.
Applications for the BAT721 include ultra-high-speed switching, line termination, voltage clamping, and reverse polarity protection. Its SOT23 package is ideal for surface-mount designs where space is a constraint.
This diode is rated for a junction temperature up to 125 °C and an ambient temperature up to 150 °C. The thermal resistance from junction to ambient in free air is 500 K/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200 mA.
40 V.
Maximum 550 mV.
SOT23 surface-mount package.
Maximum 15 µA at VR=30 V.
50 pF at VR=0 V and f=1 MHz.