| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,335 pcs
|
1335 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Forward Current | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature Range | |
| Storage Temperature |
The BAT18 is a Silicon RF Switching Diode manufactured by NXP Semiconductors. It is designed for efficient operation in VHF and UHF frequency ranges, specifically above 10 MHz, offering low-loss switching capabilities.
This PIN diode exhibits a low forward resistance, making it suitable for RF applications where signal integrity is crucial. The device operates within a wide temperature range of -55°C to 125°C and has a maximum junction temperature of 150°C.
The BAT18 is housed in a compact SOT-23 package, suitable for surface mounting. Standard packaging options include reels of 3,000 and 10,000 pieces, facilitating automated assembly processes. Its electrical characteristics include a reverse voltage rating of 35V, a forward current of up to 100mA, and a typical diode capacitance of 0.75pF at 1MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
35V
100mA
SOT-23
0.92V
0.75pF at 20V and 1MHz
-55°C to 125°C