| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,100 pcs
|
11100 pcs | On Request | 1 | On Request | On Request | 2011 | On Request | On Request | |
|
976 pcs
|
976 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
976 pcs
|
976 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Forward Current | |
| Forward Voltage | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature Range | |
| Reverse Current | |
| Storage Temperature |
The Infineon BAR63-03W is a Silicon PIN Diode suitable for high-speed switching of RF signals. It offers very low forward resistance, resulting in low insertion loss, and very low capacitance for high isolation.
This diode is designed for frequencies up to 3GHz. Key electrical characteristics include a maximum reverse voltage of 50V and a maximum forward current of 100mA. The typical forward voltage is 0.95V at 100mA. Capacitance is typically 0.3pF at 5V and 1MHz, and 0.21pF at 0V and 100MHz-1.8GHz.
It features a typical charge carrier life time of 75ns and an I-region width of 4.5µm. Insertion loss is as low as 0.1dB at 10mA and 1.8GHz, with isolation up to 17.9dB at 0.9GHz.
The BAR63-03W is housed in a surface-mount SOD323 package. It operates within a temperature range of -55°C to 125°C and is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 50 V.
The maximum forward current is 100 mA.
The typical forward voltage is 0.95 V at 100 mA.
The diode capacitance is a maximum of 0.3 pF at 5 V and 1 MHz.
The operating temperature range is -55 °C to 125 °C.
The BAR63-03W is available in a SOD323 package.
The BAR63-03W is suitable for frequencies up to 3 GHz.