| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
300,000 pcs
|
300000 pcs | On Request | 1 | On Request | On Request | 25+ | On Request | On Request | |
|
51,020 pcs
|
51020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Current - Average Rectified (Io) | |
| Forward Voltage (Maximum @ IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C) | |
| Forward Voltage (Maximum @ IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; pulsed; Tamb = 25 °C) | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature - Junction | |
| Package Description | |
| Reverse Current (Maximum @ VR = 50 V, Tamb = 25 °C) | |
| Reverse Current (Maximum @ VR = 70 V, Tamb = 25 °C) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Thermal Resistance from Junction to Ambient | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) |
The BAS70L,315 is a general-purpose Schottky diode manufactured by Nexperia. It is designed for ultra high-speed switching and voltage clamping applications.
With a maximum reverse voltage of 70 V and a forward current rating of 70 mA, the diode features a low forward voltage drop of 410 mV at 1 mA and 750 mV at 10 mA. Reverse leakage current is minimal at 100 nA at 50 V reverse voltage. The device also offers a low junction capacitance of 2 pF at 0 V, making it suitable for high-frequency circuits.
The junction temperature can operate up to 150 °C, with a storage temperature range of -65 °C to 150 °C. The thermal resistance from junction to ambient is 450 K/W when mounted on a standard FR4 PCB footprint. The diode is supplied in a surface-mount package (SOD-882 / DFN1006-2) with a compact body size of 1.2 mm x 0.8 mm x 0.6 mm, ideal for space-constrained designs.
Typical applications include ultra high-speed switching circuits and voltage clamping protection. The diode's low capacitance and high switching speed make it well-suited for RF and high-frequency signal processing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
| 10+ | $0.14 | $0.14 |
| 100+ | $0.10 | $0.10 |
| 500+ | $0.07 | $0.07 |
| 1,000+ | $0.06 | $0.06 |
| 2,500+ | $0.05 | $0.05 |
| 5,000+ | $0.05 | $0.05 |
| 10,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
70 V.
70 mA.
410 mV at 1 mA, 750 mV at 10 mA, and 1 V at 15 mA (all at 25°C, pulsed).
Surface-mount SOD-882 (also known as DFN1006-2).
100 nA at 50 V reverse voltage and 10 µA at 70 V (at 25°C).
2 pF at 0 V and 1 MHz.
Maximum junction temperature is 150°C. Storage temperature ranges from -65°C to 150°C.