| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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488 pcs
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488 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BAS70-05W,115 is a general-purpose dual Schottky diode designed for ultra-high-speed switching and voltage clamping applications. It comes in a compact SOT323 (SC-70) surface-mounted device (SMD) plastic package.
Key electrical characteristics include a maximum forward current of 70 mA and a reverse voltage rating of 70 V. The forward voltage is typically 410 mV at 1 mA, 750 mV at 10 mA, and 1 V at 15 mA. Reverse leakage current is low, measuring 100 nA at 50 V and 10 µA at 70 V. The diode capacitance is a maximum of 2 pF at 0 V and 1 MHz.
This diode offers high switching speed, low leakage current, high breakdown voltage, and low capacitance, making it suitable for demanding applications. The operating junction temperature range is -65 °C to 150 °C, with a maximum ambient temperature of 150 °C.
The device is mounted using a surface mount technique in an SC-70 package with 3 leads and a 1.3 mm pitch. The body dimensions are 2 mm x 1.25 mm x 0.95 mm.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum forward current is 70 mA.
The typical forward voltage at 1 mA is 410 mV.
The maximum reverse voltage rating is 70 V.
The diode capacitance is a maximum of 2 pF.
The package type is SC-70, a surface-mounted device.