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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
217,020 pcs
|
217020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Voltage |
The BAS31,215 is a dual avalanche diode in a series connection configuration, designed for fast switching applications. It features a typical reverse recovery time of 50 ns and a typical forward voltage of 1 V at 200 mA. The reverse leakage current is a maximum of 100 nA at 90 V.
This diode array is built with avalanche technology, providing robust performance in high-voltage environments. The maximum junction temperature is 150°C, making it suitable for a range of operating conditions.
The device is packaged in a surface-mount SOT23 (TO-236-3, SC-59) case, which is ideal for space-constrained designs. The supplier device package is TO-236AB.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.35 | $0.35 |
| 10+ | $0.22 | $0.22 |
| 50+ | $0.15 | $0.15 |
| 100+ | $0.13 | $0.13 |
| 500+ | $0.10 | $0.10 |
| 3,000+ | $0.07 | $0.07 |
| 9,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical reverse recovery time is 50 ns.
The typical forward voltage is 1 V at a forward current of 200 mA.
It is available in a surface mount SOT23 package (TO-236-3, SC-59, SOT-23-3) with supplier device package TO-236AB.
The diode array is rated for 90 V reverse voltage, as indicated by the reverse leakage test condition.