| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The BAS116,235 from NXP Semiconductors is an epitaxial medium-speed switching diode characterized by its low leakage current, making it suitable for specialized applications in surface-mounted circuits. Encapsulated in a compact SOT-23 plastic SMD package, this diode offers a continuous reverse voltage of up to 75V and a repetitive peak reverse voltage of 85V.
Key electrical parameters include a maximum forward current of 215mA under specific pulse conditions and a typical forward voltage of 1.1V at 50mA. The diode exhibits a typical switching time of 0.8µs and a very low typical reverse leakage current of 3 pA (0.003 nA) at 75V reverse voltage. The device is AEC-Q101 qualified, indicating its suitability for demanding applications.
Designed for surface mounting, the SOT-23 package is standard for miniaturized electronic assemblies. The diode's thermal characteristics include a maximum junction temperature of 150°C and a total power dissipation of 250mW when mounted on an FR4 PCB. Its robust construction and specific low-leakage properties make it a reliable choice for sensitive circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage is 85 V.
The typical forward voltage is 1.1 V at 50 mA.
The typical switching time is 0.8 µs.
The typical reverse leakage current is 0.003 nA.
The BAS116,235 is supplied in a SOT-23 package.