| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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594 pcs
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594 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Alliance AS4C16M16D1-5BIN is a high-speed CMOS double data rate synchronous DRAM (SDRAM) with a density of 256 Mbits. It is internally configured as a quad 4M x 16 DRAM with a synchronous interface, operating at a fast clock rate of 200MHz.
Key features include a CAS Latency of 3, programmable burst lengths of 2, 4, or 8, and an SSTL_2 I/O interface. The device supports Auto Refresh and Self Refresh functions, with 8192 refresh cycles per 64ms. It is available in a 60-ball FBGA package and operates across an industrial temperature range of -40°C to 85°C.
This SDRAM is well-suited for applications requiring high memory bandwidth, making it particularly suitable for high-performance main memory and graphics applications. The power supplies VDD and VDDQ are rated at 2.5V ± 0.2V.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The AS4C16M16D1-5BIN operates in the industrial temperature range of -40°C to 85°C.
The maximum clock frequency for the AS4C16M16D1-5BIN is 200MHz.
The CAS Latency for the AS4C16M16D1-5BIN is 3.
The AS4C16M16D1-5BIN comes in a 60-ball FBGA package.
The operating voltage for the AS4C16M16D1-5BIN is 2.5V ± 0.2V.