| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,691 pcs
|
1691 pcs | On Request | 1 | On Request | On Request | 1647+ | On Request | On Request | |
|
587 pcs
|
587 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AP9435GM is a P-Channel Enhancement Mode Power MOSFET manufactured by Advanced Power Electronics Corp. This component is designed to provide a balance of fast switching, rugged device design, low on-resistance, and cost-effectiveness.
Key electrical characteristics include a nominal drain-source voltage of 30V and a continuous drain current of 5.8A. The drain-source on-resistance is specified as 42mΩ at 10V and 5.8A. These specifications make it suitable for low voltage applications.
The MOSFET is housed in an SO-8 package, which is a universally preferred surface mount package for commercial and industrial applications. Its design is suited for applications such as DC/DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.13 | $2.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal drain-source voltage rating for the AP9435GM is 30V.
The continuous drain current for the AP9435GM is 5.8A.
The drain-source on-resistance is 42mΩ when measured at 10V and 5.8A.
The AP9435GM is supplied in an SOP-8 package.