| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,985 pcs
|
28985 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Package / Case |
The Toshiba TPC8224-H is a Silicon MOSFET with key electrical characteristics including a drain-source breakdown voltage (BVDSS) of 30V and a maximum continuous drain current (ID max) of 8A at 25°C. Its on-resistance (RDS(ON)) is rated at a maximum of 0.026 Ohms under specific test conditions (VGS = 4.5V, ID = 8A, TA = 25°C).
This MOSFET is housed in a compact SOP-8 package, suitable for surface mounting. The package dimensions are approximately 4.90mm x 6.00mm. Thermal characteristics include a junction-to-ambient thermal resistance (RthJA) of 83.3 C/W.
Additional electrical parameters include typical gate-source charge (QGS) of 2.2 nC, typical gate-drain charge (QGD) of 0.9 nC, and a total gate charge (QG Total) of 9.5 nC. The maximum power dissipation (PD max) is 1.5W at 25°C.
Calculated current values provide further insight into its performance under thermal stress. A conservative calculation for continuous drain current at maximum junction temperature (150°C) and ambient temperature (25°C) is 5.4A, while a realistic calculation suggests up to 15.5A under specific system thermal resistance conditions.
The maximum drain-source voltage (BVDSS) for the TPC8224-H is 30V.
The maximum continuous drain current (ID max) for the TPC8224-H is 8A at 25°C.
The on-resistance (RDS(ON)) of the TPC8224-H is a maximum of 0.026 Ohms at VGS = 4.5V and TA = 25°C.
The TPC8224-H is available in an SOP-8 package suitable for surface mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TPC8224-H is 1 Unlimited.
The REACH status for the TPC8224-H is REACH Unaffected.